WTM5551 Datasheet and Replacement
Type Designator: WTM5551
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-89
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WTM5551 Datasheet (PDF)
wtm5551.pdf

WTM5551NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123Features:SOT-89* Switching and amplification in high Voltage Applications such as Telephony.* Low Current(Max. 600mA)* High Voltage(Max. 180V)Mechanical Data:* Case : Molded PlasticABSOLUTE MAXIMUM RATINGS(TA=25C Unless Otheerwise Noted)Rating Symbol Value UnitVCBO180
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC5409 | BLY85 | T2058 | 2SC2750 | OC304 | AUY29-5 | 2SD161
Keywords - WTM5551 transistor datasheet
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History: 2SC5409 | BLY85 | T2058 | 2SC2750 | OC304 | AUY29-5 | 2SD161



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