All Transistors. WTM5551 Datasheet

 

WTM5551 Datasheet and Replacement


   Type Designator: WTM5551
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-89
 

 WTM5551 Substitution

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WTM5551 Datasheet (PDF)

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WTM5551

WTM5551NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123Features:SOT-89* Switching and amplification in high Voltage Applications such as Telephony.* Low Current(Max. 600mA)* High Voltage(Max. 180V)Mechanical Data:* Case : Molded PlasticABSOLUTE MAXIMUM RATINGS(TA=25C Unless Otheerwise Noted)Rating Symbol Value UnitVCBO180

Datasheet: WTD882 , WTM1624 , WTM1766 , WTM1797 , WTM2222A , WTM2907A , WTM3904 , WTM3906 , TIP42 , WTM649A , WTM669A , WTM772 , WTM882 , WTMA44 , WTP772BCE , WTP772-ECB , WTP882 .

History: 2SA937LN | 2SA935 | WTS772 | 2SB1284

Keywords - WTM5551 transistor datasheet

 WTM5551 cross reference
 WTM5551 equivalent finder
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