WTM5551 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

WTM5551 Specs and Replacement

Type Designator: WTM5551

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT-89

WTM5551 Substitution

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WTM5551 datasheet

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WTM5551 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features SOT-89 * Switching and amplification in high Voltage Applications such as Telephony. * Low Current(Max. 600mA) * High Voltage(Max. 180V) Mechanical Data * Case Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25 C Unless Otheerwise Noted) Rating Symbol Value Unit VCBO 180... See More ⇒

Detailed specifications: WTD882, WTM1624, WTM1766, WTM1797, WTM2222A, WTM2907A, WTM3904, WTM3906, 2SD2499, WTM649A, WTM669A, WTM772, WTM882, WTMA44, WTP772BCE, WTP772-ECB, WTP882