All Transistors. WTM649A Datasheet

 

WTM649A Datasheet and Replacement


   Type Designator: WTM649A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT-89
 

 WTM649A Substitution

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WTM649A Datasheet (PDF)

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WTM649A

WTM649APNP Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-180VCEOVCollector-Emitter Voltage -160VEBOVEmitter-Base Voltage -5IC(DC)-1.5Collector CurrentAIC(Pulse) -3Collector Power Dissipation PD 1 WJunction Temperature

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ZXT10P40DE6 | ZXTP558L | 2N3250AUB | UPT723 | ZXTN10150DZ

Keywords - WTM649A transistor datasheet

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