WTM649A Specs and Replacement
Type Designator: WTM649A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT-89
WTM649A Substitution
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WTM649A datasheet
WTM649A PNP Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -180 VCEO V Collector-Emitter Voltage -160 VEBO V Emitter-Base Voltage -5 IC(DC) -1.5 Collector Current A IC(Pulse) -3 Collector Power Dissipation PD 1 W Junction Temperature... See More ⇒
Detailed specifications: WTM1624, WTM1766, WTM1797, WTM2222A, WTM2907A, WTM3904, WTM3906, WTM5551, 2SC2625, WTM669A, WTM772, WTM882, WTMA44, WTP772BCE, WTP772-ECB, WTP882, WTS772
Keywords - WTM649A pdf specs
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