KTB1124 Datasheet. Specs and Replacement

Type Designator: KTB1124  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 39 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-89

 KTB1124 Substitution

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KTB1124 datasheet

 ..1. Size:518K  kec

 ktb1124.pdf pdf_icon

KTB1124

SEMICONDUCTOR KTB1124 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -60 V Collector... See More ⇒

 9.1. Size:396K  kec

 ktb1151.pdf pdf_icon

KTB1124

SEMICONDUCTOR KTB1151 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE A LARGE CURRENT B D C E FEATURES F High Power Dissipation PC=1.5W(Ta=25 ) Complementary to KTD1691. G H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L MAXIMUM RATING (Ta=25 ) C 0.7 _ + D 3.2 0.1 CHARACTERISTIC SYMBOL RATING UNIT E 3.5 _ + F 11.0 0.3 VCBO -60 V Collecto... See More ⇒

Detailed specifications: KTA708, KTA711E, KTA711T, KTA711U, KTA712E, KTA712U, KTA733, KTA733B, 2SD313, KTB1151, KTB1234T, KTB1241, KTB1260, KTB1772, KTB2234, KTB2510, KTB2530

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