KTB772 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTB772
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO126
KTB772 Transistor Equivalent Substitute - Cross-Reference Search
KTB772 Datasheet (PDF)
ktb772.pdf
SEMICONDUCTOR KTB772TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY POWER AMPLIFIER ALOW SPEED SWITCHING BDCEFEATURESFComplementary to KTD882.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBO -40 VCollector-Base Voltage_+F 11.0 0.3G 2.9 MAXVCEO -30 V
ktb778.pdf
SEMICONDUCTOR KTB778TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION.DIM MILLIMETERSFEATURES A 16.30 MAXA C_+B 12.00 0.30RComplementary to KTD998._+C 5.50 0.20WWU D 1.20 MAXRecommended for 4550W Audio Frequency E 8.00VF 5.00Amplifier Output Stage._+G 17.00 0.30H 0.60+0.15/-0.10I 2.50_+J 20.0 0.1IM
ktb778.pdf
isc Silicon PNP Power Transistor KTB778DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type KTD998Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOL
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
