KTB817B Datasheet. Specs and Replacement

Type Designator: KTB817B  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3PN-E

 KTB817B Substitution

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KTB817B datasheet

 ..1. Size:688K  kec

 ktb817b.pdf pdf_icon

KTB817B

SEMICONDUCTOR KTB817B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD1047B. Recommended for 60W Audio Frequency Amplifier Output Stage. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -160 V Collector-Base Voltage VCEO -140 V Collector-Emitter Voltage VEBO Emitter-Base Voltage -6 V IC DC -12 C... See More ⇒

 8.1. Size:392K  kec

 ktb817.pdf pdf_icon

KTB817B

SEMICONDUCTOR KTB817 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Complementary to KTD1047. Recommended for 60W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYMBOL RATING... See More ⇒

Detailed specifications: KTB2234, KTB2510, KTB2530, KTB598, KTB631K, KTB688B, KTB764, KTB772, 13005, KTB985, KTC1815, KTC2020D, KTC2020L, KTC2022D, KTC2022L, KTC2025D, KTC2025L

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