KTB817B Datasheet, Equivalent, Cross Reference Search
Type Designator: KTB817B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3P(N)-E
KTB817B Transistor Equivalent Substitute - Cross-Reference Search
KTB817B Datasheet (PDF)
ktb817b.pdf
SEMICONDUCTOR KTB817BTECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD1047B.Recommended for 60W Audio Frequency Amplifier Output Stage.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -160 VCollector-Base VoltageVCEO -140 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -6 VICDC -12C
ktb817.pdf
SEMICONDUCTOR KTB817TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORHIGH POWER AMPLIFIER APPLICATION. A Q BKFEATURES Complementary to KTD1047.Recommended for 60W Audio Frequency DIM MILLIMETERSAmplifier Output Stage.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25 )G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL RATING
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
