KTC5197 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTC5197
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 120 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO3P(N)
KTC5197 Transistor Equivalent Substitute - Cross-Reference Search
KTC5197 Datasheet (PDF)
ktc5197.pdf
SEMICONDUCTOR KTC5197TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION. A Q BKFEATURES Recommended for 55W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to KTA1940.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25 )G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL RATIN
ktc5103d l.pdf
SEMICONDUCTOR KTC5103D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW COLLECTOR SATURATION VOLTAGELARGE CURRENT AI C JFEATURES DIM MILLIMETERS_A 6.60 + 0.2High Power Dissipation : PC=1.3W(Ta=25 )_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTA1385D/L_D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1.00 MAX_I 2.30 + 0.2_J 0.5 + 0.1_H K 2.00 +
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
