KTC611T Datasheet. Specs and Replacement

Type Designator: KTC611T  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TSV

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KTC611T datasheet

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KTC611T

SEMICONDUCTOR KTC611T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES DIM MILLIMETERS _ A 2.9 + 0.2 15 Excellent hFE Linearity B 1.6+0.2/-0.1 _ C 0.70 + 0.05 hFE(2)=25(Min.) at VCE=6V, IC=400mA. 2 _ D 0.4 + 0.1 Complementary to KTA511T. E 2.8+0.2/-0.3 _ + F 1.9 0.2 3 4 G 0.95 _ H 0.16 + 0.05 I 0.00-0.1... See More ⇒

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KTC611T

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Detailed specifications: KTC5706, KTC5706D, KTC5706L, KTC5707D, KTC5707L, KTC601E, KTC601F, KTC601UGR, 2SD669, KTC801E, KTC801F, KTC801U, KTC802E, KTC8050S, KTC811E, KTC811T, KTC811U

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