KTD1530 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTD1530
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 15000
Noise Figure, dB: -
Package: TO3P(N)
KTD1530 Transistor Equivalent Substitute - Cross-Reference Search
KTD1530 Datasheet (PDF)
ktd1530.pdf
SEMICONDUCTOR KTD1530TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIERDARLINGTON TRANSISTOR.AQ BNO KFEATURES DIM MILLIMETERSComplementary to KTB2530. _A +15.60 0.20_B4.80 + 0.20Recommended for 80W Audio Amplifier Output Stage. _C 19.90 + 0.20_D 2.00 0.20+_d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20_G 3.50 + 0.20D _
ktd1510.pdf
SEMICONDUCTOR KTD1510TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIERA Q BDARLINGTON TRANSISTOR.KFEATURES Complementary to KTB2510.DIM MILLIMETERSRecommended for 60W Audio Amplifier Output Stage. A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25)G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
