KTX111T Datasheet, Equivalent, Cross Reference Search
Type Designator: KTX111T
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 7(13) pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TS6
KTX111T Transistor Equivalent Substitute - Cross-Reference Search
KTX111T Datasheet (PDF)
ktx111t.pdf
SEMICONDUCTOR KTX111TTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORGENERAL PURPOSE APPLICATION.EFEATURESK B KIncluding two devices in TS6.DIM MILLIMETERS_(Thin Super Mini type with 6 pin) A 2.9 + 0.216B 1.6+0.2/-0.1Simplify circuit design. _C 0.70 0.05+2 5_+D 0.4 0.1Reduce a quantity of parts and manufacturing process. E 2.8+0.2/-0.3_F 1.9 + 0.2
ktx112t.pdf
SEMICONDUCTOR KTX112TTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORGENERAL PURPOSE APPLICATION.EFEATURESK B KIncluding two devices in TS6.DIM MILLIMETERS_(Thin Super Mini type with 6 pin) A 2.9 + 0.216B 1.6+0.2/-0.1Simplify circuit design. _C 0.70 0.05+2 5_+D 0.4 0.1Reduce a quantity of parts and manufacturing process. E 2.8+0.2/-0.3_F 1.9 + 0.2
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
