KTX112T pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

KTX112T Specs and Replacement

Type Designator: KTX112T

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 19 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TS6

KTX112T Substitution

- BJT ⓘ Cross-Reference Search

KTX112T datasheet

..1. Size:409K kec

ktx112t.pdf pdf_icon

SEMICONDUCTOR KTX112T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. E FEATURES K B K Including two devices in TS6. DIM MILLIMETERS _ (Thin Super Mini type with 6 pin) A 2.9 + 0.2 16 B 1.6+0.2/-0.1 Simplify circuit design. _ C 0.70 0.05 + 2 5 _ + D 0.4 0.1 Reduce a quantity of parts and manufacturing process. E 2.8+0.2/-0.3 _ F 1.9 + 0.2... See More ⇒

9.1. Size:64K kec

ktx111t.pdf pdf_icon

SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. E FEATURES K B K Including two devices in TS6. DIM MILLIMETERS _ (Thin Super Mini type with 6 pin) A 2.9 + 0.2 16 B 1.6+0.2/-0.1 Simplify circuit design. _ C 0.70 0.05 + 2 5 _ + D 0.4 0.1 Reduce a quantity of parts and manufacturing process. E 2.8+0.2/-0.3 _ F 1.9 + 0.2... See More ⇒

Detailed specifications: KTN2907AE, KTN2907AU, KTX101E, KTX101U, KTX102E, KTX102U, KTX103E, KTX111T, S9014, KTX201E, KTX201U, KTX215E, KTX216U, KTX301E, KTX301U, KTX302U, KTX303U