KTX112T Specs and Replacement
Type Designator: KTX112T
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 19 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TS6
KTX112T Substitution
- BJT ⓘ Cross-Reference Search
KTX112T datasheet
SEMICONDUCTOR KTX112T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. E FEATURES K B K Including two devices in TS6. DIM MILLIMETERS _ (Thin Super Mini type with 6 pin) A 2.9 + 0.2 16 B 1.6+0.2/-0.1 Simplify circuit design. _ C 0.70 0.05 + 2 5 _ + D 0.4 0.1 Reduce a quantity of parts and manufacturing process. E 2.8+0.2/-0.3 _ F 1.9 + 0.2... See More ⇒
SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. E FEATURES K B K Including two devices in TS6. DIM MILLIMETERS _ (Thin Super Mini type with 6 pin) A 2.9 + 0.2 16 B 1.6+0.2/-0.1 Simplify circuit design. _ C 0.70 0.05 + 2 5 _ + D 0.4 0.1 Reduce a quantity of parts and manufacturing process. E 2.8+0.2/-0.3 _ F 1.9 + 0.2... See More ⇒
Detailed specifications: KTN2907AE , KTN2907AU , KTX101E , KTX101U , KTX102E , KTX102U , KTX103E , KTX111T , S9014 , KTX201E , KTX201U , KTX215E , KTX216U , KTX301E , KTX301U , KTX302U , KTX303U .
Keywords - KTX112T pdf specs
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History: 2SD338-2 | FZT795A
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