KTX201E Datasheet, Equivalent, Cross Reference Search
Type Designator: KTX201E
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 2(4) pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TESV
KTX201E Transistor Equivalent Substitute - Cross-Reference Search
KTX201E Datasheet (PDF)
ktx201e.pdf
SEMICONDUCTOR KTX201ETECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORGENERAL PURPOSE APPLICATION.BFEATURESB1Including two devices in TESV.(Thin Extreme Super mini type with 5 pin)Simplify circuit design. 1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a quantity of parts and manufacturing process._+A1 1.0 0.052_+B 1.6 0.05_+B1 1.2 0.05C 0.503 4_+D
ktx201u.pdf
SEMICONDUCTOR KTX201UTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORGENERAL PURPOSE APPLICATION.FEATURESBIncluding two devices in USV. B1(Ultra Super mini type with 5 leads)1 5DIM MILLIMETERS_Simplify circuit design. 2.00 0.20+A_2+1.3 0.1A1Reduce a quantity of parts and manufacturing process_+B 2.1 0.13 4 D_+B1 1.25 0.1C 0.65D 0.2+0.10/-0
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
