All Transistors. KTX811T Datasheet

 

KTX811T Datasheet and Replacement


   Type Designator: KTX811T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TS6
 

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KTX811T Datasheet (PDF)

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KTX811T

SEMICONDUCTORKTX811TEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODETV Control board Application EK B KFEATURESDIM MILLIMETERS_One NPN Transistor (Q1)A 2.9 + 0.216B 1.6+0.2/-0.1Two Switching Diode (D1, D2)_C 0.70 + 0.052 5_+D 0.4 0.1Low Saturation VoltageE 2.8+0.2/-0.3: VCE(sat) = 0.25V(Max)@ IC = 100mA, IB =

Datasheet: KTX402U , KTX403U , KTX411T , KTX412T , KTX421U , KTX511T , KTX512T , KTX711T , D209L , KTX955T , MJD112L , MJD117L , MJE13003HV , MJE13004D , MJE13005D , MJE13005DF , MJE13005F .

History: BFQ263

Keywords - KTX811T transistor datasheet

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