KTX811T Datasheet, Equivalent, Cross Reference Search
Type Designator: KTX811T
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TS6
KTX811T Transistor Equivalent Substitute - Cross-Reference Search
KTX811T Datasheet (PDF)
..1. Size:379K kec
ktx811t.pdf
ktx811t.pdf
SEMICONDUCTORKTX811TEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODETV Control board Application EK B KFEATURESDIM MILLIMETERS_One NPN Transistor (Q1)A 2.9 + 0.216B 1.6+0.2/-0.1Two Switching Diode (D1, D2)_C 0.70 + 0.052 5_+D 0.4 0.1Low Saturation VoltageE 2.8+0.2/-0.3: VCE(sat) = 0.25V(Max)@ IC = 100mA, IB =
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
