All Transistors. KTX811T Datasheet

 

KTX811T Datasheet and Replacement


   Type Designator: KTX811T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TS6
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KTX811T Datasheet (PDF)

 ..1. Size:379K  kec
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KTX811T

SEMICONDUCTORKTX811TEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODETV Control board Application EK B KFEATURESDIM MILLIMETERS_One NPN Transistor (Q1)A 2.9 + 0.216B 1.6+0.2/-0.1Two Switching Diode (D1, D2)_C 0.70 + 0.052 5_+D 0.4 0.1Low Saturation VoltageE 2.8+0.2/-0.3: VCE(sat) = 0.25V(Max)@ IC = 100mA, IB =

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KT8255A | BC859W | AUY19-3 | JA100 | 2SD471 | AC138 | 2SC4370AP

Keywords - KTX811T transistor datasheet

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