KRA522T Datasheet, Equivalent, Cross Reference Search
Type Designator: KRA522T
SMD Transistor Code: PB
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.9
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.8
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 39
Noise Figure, dB: -
Package: TSV
KRA522T Transistor Equivalent Substitute - Cross-Reference Search
KRA522T Datasheet (PDF)
kra521t-kra526t.pdf
SEMICONDUCTOR KRA521T~KRA526TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT SWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION.EBFEATURES DIM MILLIMETERS_A 2.9 + 0.215With Built-in Bias Resistors.B 1.6+0.2/-0.1_C 0.70 + 0.05Simplify Circuit Design.2_D 0.4 + 0.1Reduce a Quantity of Parts and Manufacturing Process.E 2.8+
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N2891LCC4
History: 2N2891LCC4
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