KRA564E Datasheet, Equivalent, Cross Reference Search
Type Designator: KRA564E
SMD Transistor Code: PP
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TESV
KRA564E Transistor Equivalent Substitute - Cross-Reference Search
KRA564E Datasheet (PDF)
kra560e-kra564e.pdf
SEMICONDUCTOR KRA560E~KRA564EEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.Simplify Circuit Design.1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process._+A1 1.0 0.052_+B 1.6 0.05High Packing Density._+B1
kra560u-kra564u.pdf
SEMICONDUCTOR KRA560U~KRA564UEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.1 5DIM MILLIMETERS_Simplify Circuit Design. A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D_B1 1.25 + 0.1High Packing
kra560f-kra564f.pdf
SEMICONDUCTOR KRA560F~KRA564FEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSReduce a Quantity of Parts and Manufacturing Process._+A 1.0 0.05_+A1 0.7 0.05Thin Fine Pitch Super mini 5 pin Package._+
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
