All Transistors. 2N600 Datasheet

 

2N600 Datasheet and Replacement


   Type Designator: 2N600
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 30 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO31
 

 2N600 Substitution

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2N600 Datasheet (PDF)

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2N600

LESHAN RADIO COMPANY, LTD.600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of productcompliance with RoHS requirements.1/5LESHAN RADIO COMPANY, LTD.L2N600Electrical Characteristics Tc = 25 C unless otherwise notedParameter Symbol Test Condition Min Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage

Datasheet: 2N5995 , 2N5996 , 2N5998 , 2N5999 , 2N59A , 2N59B , 2N59C , 2N60 , 2N2907 , 2N6000 , 2N6001 , 2N6002 , 2N6003 , 2N6004 , 2N6005 , 2N6006 , 2N6007 .

History: BF281 | FTC3876 | 2SC5228 | RCA42

Keywords - 2N600 transistor datasheet

 2N600 cross reference
 2N600 equivalent finder
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