2N600 Datasheet and Replacement
Type Designator: 2N600
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Emitter-Base Voltage |Veb|: 30 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO31
2N600 Substitution
2N600 Datasheet (PDF)
l2n600.pdf

LESHAN RADIO COMPANY, LTD.600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of productcompliance with RoHS requirements.1/5LESHAN RADIO COMPANY, LTD.L2N600Electrical Characteristics Tc = 25 C unless otherwise notedParameter Symbol Test Condition Min Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage
2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf

Datasheet: 2N5995 , 2N5996 , 2N5998 , 2N5999 , 2N59A , 2N59B , 2N59C , 2N60 , 2N2907 , 2N6000 , 2N6001 , 2N6002 , 2N6003 , 2N6004 , 2N6005 , 2N6006 , 2N6007 .
History: BF281 | FTC3876 | 2SC5228 | RCA42
Keywords - 2N600 transistor datasheet
2N600 cross reference
2N600 equivalent finder
2N600 lookup
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History: BF281 | FTC3876 | 2SC5228 | RCA42



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