All Transistors. 2N6009 Datasheet

 

2N6009 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N6009
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92

 2N6009 Transistor Equivalent Substitute - Cross-Reference Search

   

2N6009 Datasheet (PDF)

 ..1. Size:1285K  sprague
 2n5419 2n5420 2n5550 2n5551 2n5830 2n5831 2n5832 2n5998 2n5999 2n6008 2n6009 2n6076 2n6426 2n6427.pdf

2N6009 2N6009

 9.1. Size:395K  lrc
 l2n600.pdf

2N6009 2N6009

LESHAN RADIO COMPANY, LTD.600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of productcompliance with RoHS requirements.1/5LESHAN RADIO COMPANY, LTD.L2N600Electrical Characteristics Tc = 25 C unless otherwise notedParameter Symbol Test Condition Min Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage

Datasheet: 2N6001 , 2N6002 , 2N6003 , 2N6004 , 2N6005 , 2N6006 , 2N6007 , 2N6008 , TIP41 , 2N601 , 2N6010 , 2N6011 , 2N6012 , 2N6013 , 2N6014 , 2N6015 , 2N6016 .

 

 
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