KRC422E Datasheet. Specs and Replacement
Type Designator: KRC422E 📄📄
SMD Transistor Code: N9
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 100 kOhm
Built in Bias Resistor R2 = 100 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 62
Package: ESM
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KRC422E datasheet
SEMICONDUCTOR KRC416E KRC422E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors. _ + A 1.60 0.10 D Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ + ... See More ⇒
SEMICONDUCTOR KRC416V KRC422V EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _... See More ⇒
SEMICONDUCTOR KRC416 KRC422 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES M B M With Built-in Bias Resistors. DIM MILLIMETERS _ + A 2.00 0.20 D Simplify Circuit Design. 2 _ + B 1.25 0.15 _ + C 0.90 0.10 Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.3+0.10/-0.05 _ ... See More ⇒
Detailed specifications: KRC419V, KRC420, KRC420E, KRC420V, KRC421, KRC421E, KRC421V, KRC422, A1013, KRC422V, KRC451, KRC452, KRC453, KRC454, KRC455, KRC456, KRC457
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BJT Parameters and How They Relate
History: DMMT3904W
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