KRC645T Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC645T
SMD Transistor Code: NE
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.9
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.8
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 200
MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: TSV
KRC645T Transistor Equivalent Substitute - Cross-Reference Search
KRC645T Datasheet (PDF)
krc641t-krc646t.pdf
SEMICONDUCTOR KRC641T~KRC646TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT SWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION.EBFEATURES DIM MILLIMETERS_A 2.9 + 0.215With Built-in Bias Resistors.B 1.6+0.2/-0.1_C 0.70 + 0.05Simplify Circuit Design.2_D 0.4 + 0.1Reduce a Quantity of Parts and Manufacturing Process.E 2.8+
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: NKT656