KRC670E Datasheet. Specs and Replacement

Type Designator: KRC670E  📄📄 

SMD Transistor Code: N7

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 24

Noise Figure, dB: -

Package: TESV

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KRC670E datasheet

 9.1. Size:69K  kec

 krc666e-krc672e.pdf pdf_icon

KRC670E

SEMICONDUCTOR KRC666E KRC672E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 _ + B1 1.2 0.05 C 0.50 3 ... See More ⇒

 9.2. Size:428K  kec

 krc666u-krc672u.pdf pdf_icon

KRC670E

SEMICONDUCTOR KRC666U KRC672U EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 C 0.65 D ... See More ⇒

Detailed specifications: KRC666E, KRC666U, KRC667E, KRC667U, KRC668E, KRC668U, KRC669E, KRC669U, TIP3055, KRC670U, KRC671E, KRC671U, KRC672E, KRC672U, KRC681T, KRC682T, KRC683T

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