KRC683T Datasheet. Specs and Replacement

Type Designator: KRC683T  📄📄 

SMD Transistor Code: MSB

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 5.6 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 25 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 4.8 pF

Forward Current Transfer Ratio (hFE), MIN: 350

Noise Figure, dB: -

Package: TSV

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KRC683T datasheet

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KRC683T

SEMICONDUCTOR KRC681T KRC686T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B FEATURES DIM MILLIMETERS _ A 2.9 + 0.2 15 High emitter-base voltage VEBO=25V(Min) B 1.6+0.2/-0.1 _ C 0.70 + 0.05 High reverse hFE reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) 2 _ D 0.4 + 0.1 Low on resistance Ron=1 (Typ.) (IB=5mA) E 2.8+... See More ⇒

Detailed specifications: KRC670E, KRC670U, KRC671E, KRC671U, KRC672E, KRC672U, KRC681T, KRC682T, 2N2222A, KRC684T, KRC685T, KRC686T, KRC821E, KRC821F, KRC821U, KRC822E, KRC822F

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