All Transistors. KRC683T Datasheet

 

KRC683T Datasheet and Replacement


   Type Designator: KRC683T
   SMD Transistor Code: MSB
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 5.6 kOhm
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 25 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 4.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 350
   Noise Figure, dB: -
   Package: TSV
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KRC683T Datasheet (PDF)

 9.1. Size:357K  kec
 krc681t-krc686t.pdf pdf_icon

KRC683T

SEMICONDUCTOR KRC681T~KRC686TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. AUDIO MUTING APPLICATION.EBFEATURES DIM MILLIMETERS_A 2.9 + 0.215High emitter-base voltage : VEBO=25V(Min)B 1.6+0.2/-0.1_C 0.70 + 0.05High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)2_D 0.4 + 0.1Low on resistance : Ron=1(Typ.) (IB=5mA)E 2.8+

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SC3540O | 2SA1141 | TFN3838 | BDS11SMD05 | BC407 | BUH515XI

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