KRC881T Datasheet, Equivalent, Cross Reference Search
Type Designator: KRC881T
SMD Transistor Code: MQB
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 4.8 pF
Forward Current Transfer Ratio (hFE), MIN: 350
Noise Figure, dB: -
Package: TS6
KRC881T Transistor Equivalent Substitute - Cross-Reference Search
KRC881T Datasheet (PDF)
0.1. Size:386K kec
krc881t-krc886t.pdf
krc881t-krc886t.pdf
SEMICONDUCTOR KRC881T~KRC886TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. AUDIO MUTING APPLICATION.EK B KFEATURES DIM MILLIMETERS_High emitter-base voltage : VEBO=25V(Min) A 2.9 + 0.216B 1.6+0.2/-0.1High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)_C 0.70 0.05+2 5_+D 0.4 0.1Low on resistance : Ron=1 (Typ.) (IB=5mA)E 2.8
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
