All Transistors. KRC881T Datasheet

 

KRC881T Datasheet and Replacement


   Type Designator: KRC881T
   SMD Transistor Code: MQB
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 25 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 4.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 350
   Noise Figure, dB: -
   Package: TS6
 

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KRC881T Datasheet (PDF)

 0.1. Size:386K  kec
 krc881t-krc886t.pdf pdf_icon

KRC881T

SEMICONDUCTOR KRC881T~KRC886TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. AUDIO MUTING APPLICATION.EK B KFEATURES DIM MILLIMETERS_High emitter-base voltage : VEBO=25V(Min) A 2.9 + 0.216B 1.6+0.2/-0.1High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)_C 0.70 0.05+2 5_+D 0.4 0.1Low on resistance : Ron=1 (Typ.) (IB=5mA)E 2.8

Datasheet: KRC869E , KRC869U , KRC870E , KRC870U , KRC871E , KRC871U , KRC872E , KRC872U , 8050 , KRC882T , KRC883T , KRC884T , KRC885T , KRC886T , KRX101E , KRX101U , KRX102E .

History: UNR5219

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