All Transistors. KRC884T Datasheet

 

KRC884T Datasheet and Replacement


   Type Designator: KRC884T
   SMD Transistor Code: MTB
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 6.8 kOhm
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 25 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 4.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 350
   Noise Figure, dB: -
   Package: TS6
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KRC884T Datasheet (PDF)

 9.1. Size:386K  kec
 krc881t-krc886t.pdf pdf_icon

KRC884T

SEMICONDUCTOR KRC881T~KRC886TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. AUDIO MUTING APPLICATION.EK B KFEATURES DIM MILLIMETERS_High emitter-base voltage : VEBO=25V(Min) A 2.9 + 0.216B 1.6+0.2/-0.1High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)_C 0.70 0.05+2 5_+D 0.4 0.1Low on resistance : Ron=1 (Typ.) (IB=5mA)E 2.8

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ESM2060 | ST54 | DTA123EET1G | 3DD4617H | MP602 | UPT114 | DDTC123JE

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