KRC885T Datasheet. Specs and Replacement

Type Designator: KRC885T  📄📄 

SMD Transistor Code: MUB

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 25 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 4.8 pF

Forward Current Transfer Ratio (hFE), MIN: 350

Noise Figure, dB: -

Package: TS6

  📄📄 Copy 

 KRC885T Substitution

- BJT ⓘ Cross-Reference Search

 

KRC885T datasheet

 9.1. Size:386K  kec

 krc881t-krc886t.pdf pdf_icon

KRC885T

SEMICONDUCTOR KRC881T KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K B K FEATURES DIM MILLIMETERS _ High emitter-base voltage VEBO=25V(Min) A 2.9 + 0.2 16 B 1.6+0.2/-0.1 High reverse hFE reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) _ C 0.70 0.05 + 2 5 _ + D 0.4 0.1 Low on resistance Ron=1 (Typ.) (IB=5mA) E 2.8... See More ⇒

Detailed specifications: KRC871E, KRC871U, KRC872E, KRC872U, KRC881T, KRC882T, KRC883T, KRC884T, BC558, KRC886T, KRX101E, KRX101U, KRX102E, KRX102F, KRX102U, KRX103E, KRX103U

Keywords - KRC885T pdf specs

 KRC885T cross reference

 KRC885T equivalent finder

 KRC885T pdf lookup

 KRC885T substitution

 KRC885T replacement