H2N4401 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

H2N4401 Specs and Replacement

Type Designator: H2N4401

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 6.5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-92

H2N4401 Substitution

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H2N4401 datasheet

..1. Size:53K hsmc

h2n4401.pdf pdf_icon

Spec. No. HE6215 HI-SINCERITY Issued Date 1992.09.22 Revised Date 2002.02.22 MICROELECTRONICS CORP. Page No. 1/5 H2N4401 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N4401 is designed for general purpose switching and amplifier applications. Features TO-92 Complementary to H2N4403 High Power Dissipation 625 mW at 25 C High DC Current Gain 100-300 at 150... See More ⇒

8.1. Size:53K hsmc

h2n4403.pdf pdf_icon

Spec. No. HE6221 HI-SINCERITY Issued Date 1992.09.30 Revised Date 2004.08.13 MICROELECTRONICS CORP. Page No. 1/5 H2N4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N4403 is designed for general purpose switching and amplifier applications. Features TO-92 Complementary to H2N4401 High Power Dissipation 625mW at 25 C High DC Current Gain 100-300 at 150m... See More ⇒

Detailed specifications: MMBT4403WT1 , MMBT5551DW1T1 , MMBT5551WT1 , MMBTA94LT1 , MMBTH10LT1 , H2584 , H2N3904 , H2N3906 , 2N5401 , H2N4403 , H2N5087 , H2N5401 , H2N5551 , H2N6388 , H2N6718L , H2N6718T , H2N6718V .