H2N4401 Datasheet, Equivalent, Cross Reference Search
Type Designator: H2N4401
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 6.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-92
H2N4401 Transistor Equivalent Substitute - Cross-Reference Search
H2N4401 Datasheet (PDF)
h2n4401.pdf
Spec. No. : HE6215HI-SINCERITYIssued Date : 1992.09.22Revised Date : 2002.02.22MICROELECTRONICS CORP.Page No. : 1/5H2N4401NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N4401 is designed for general purpose switching and amplifier applications.FeaturesTO-92 Complementary to H2N4403 High Power Dissipation: 625 mW at 25C High DC Current Gain: 100-300 at 150
h2n4403.pdf
Spec. No. : HE6221HI-SINCERITYIssued Date : 1992.09.30Revised Date : 2004.08.13MICROELECTRONICS CORP.Page No. : 1/5H2N4403PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N4403 is designed for general purpose switching and amplifier applications.FeaturesTO-92 Complementary to H2N4401 High Power Dissipation: 625mW at 25C High DC Current Gain: 100-300 at 150m
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
