All Transistors. HA3669 Datasheet

 

HA3669 Datasheet and Replacement


   Type Designator: HA3669
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 240
   Noise Figure, dB: -
   Package: TO-92
 

 HA3669 Substitution

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HA3669 Datasheet (PDF)

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HA3669

Spec. No. : HA200210HI-SINCERITYIssued Date : 2000.11.01Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/4HA3669NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HA3669 is designed for using in power amplifier applications, power switchingapplication.TO-92Absolute Maximum Ratings (TA=25C) Maximum TemperaturesTstg Storage Temperature.......................

Datasheet: H2N4403 , H2N5087 , H2N5401 , H2N5551 , H2N6388 , H2N6718L , H2N6718T , H2N6718V , TIP3055 , HA8050 , HA8050S , HA8550 , HA8550S , HBC517 , HBC847 , HBC848 , HBC856 .

History: 2N2219AS | C9013-H | 2N2219AQF | BTD2040N3S | 2SB34 | 2SC4467O | DSA9001

Keywords - HA3669 transistor datasheet

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