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HA3669 Specs and Replacement

Type Designator: HA3669

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 240

Noise Figure, dB: -

Package: TO-92

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HA3669 datasheet

 ..1. Size:45K  hsmc

 ha3669.pdf pdf_icon

HA3669

Spec. No. HA200210 HI-SINCERITY Issued Date 2000.11.01 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/4 HA3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA3669 is designed for using in power amplifier applications, power switching application. TO-92 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Tstg Storage Temperature.......................... See More ⇒

Detailed specifications: H2N4403 , H2N5087 , H2N5401 , H2N5551 , H2N6388 , H2N6718L , H2N6718T , H2N6718V , A1015 , HA8050 , HA8050S , HA8550 , HA8550S , HBC517 , HBC847 , HBC848 , HBC856 .

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