All Transistors. HA8050 Datasheet

 

HA8050 Datasheet and Replacement


   Type Designator: HA8050
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO-92
 

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HA8050 Datasheet (PDF)

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HA8050

Spec. No. : HE6107HI-SINCERITYIssued Date : 1998.09.05Revised Date : 2004.11.29MICROELECTRONICS CORP.Page No. : 1/5HA8050NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8050 is designed for use in 2W output amplifier of portable radios in class Bpush-pull operation.TO-92Features High total power dissipation (PT: 2W, TC=25C) High collector current (IC: 1.5A)

 0.1. Size:54K  hsmc
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HA8050

Spec. No. : HE6116HI-SINCERITYIssued Date : 1997.09.08Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5HA8050SNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8550S is designed for general purpose amplifier applications.TO-92Features High DC Current Gain (hFE=100~500 at IC=150mA) Complementary to HA8550SAbsolute Maximum Ratings Maximum Temperatu

Datasheet: H2N5087 , H2N5401 , H2N5551 , H2N6388 , H2N6718L , H2N6718T , H2N6718V , HA3669 , 2N3906 , HA8050S , HA8550 , HA8550S , HBC517 , HBC847 , HBC848 , HBC856 , HBD437T .

History: GT250-6B | GT400-3B | BC308C-92 | HE8050S | S8550G | 2SD2253

Keywords - HA8050 transistor datasheet

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