HA8050 Specs and Replacement
Type Designator: HA8050
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO-92
HA8050 Substitution
- BJT ⓘ Cross-Reference Search
HA8050 datasheet
Spec. No. HE6107 HI-SINCERITY Issued Date 1998.09.05 Revised Date 2004.11.29 MICROELECTRONICS CORP. Page No. 1/5 HA8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Features High total power dissipation (PT 2W, TC=25 C) High collector current (IC 1.5A) ... See More ⇒
Spec. No. HE6116 HI-SINCERITY Issued Date 1997.09.08 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 HA8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features High DC Current Gain (hFE=100 500 at IC=150mA) Complementary to HA8550S Absolute Maximum Ratings Maximum Temperatu... See More ⇒
Detailed specifications: H2N5087 , H2N5401 , H2N5551 , H2N6388 , H2N6718L , H2N6718T , H2N6718V , HA3669 , 13007 , HA8050S , HA8550 , HA8550S , HBC517 , HBC847 , HBC848 , HBC856 , HBD437T .
Keywords - HA8050 pdf specs
HA8050 cross reference
HA8050 equivalent finder
HA8050 pdf lookup
HA8050 substitution
HA8050 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
2sc968 | 2sd217 | bdw93c equivalent | cs7n60f | d613 transistor | fdmc8884 mosfet | k3569 mosfet equivalent | 2sa1370