All Transistors. HA8050 Datasheet

 

HA8050 Datasheet and Replacement


   Type Designator: HA8050
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO-92
      - BJT Cross-Reference Search

   

HA8050 Datasheet (PDF)

 ..1. Size:54K  hsmc
 ha8050.pdf pdf_icon

HA8050

Spec. No. : HE6107HI-SINCERITYIssued Date : 1998.09.05Revised Date : 2004.11.29MICROELECTRONICS CORP.Page No. : 1/5HA8050NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8050 is designed for use in 2W output amplifier of portable radios in class Bpush-pull operation.TO-92Features High total power dissipation (PT: 2W, TC=25C) High collector current (IC: 1.5A)

 0.1. Size:54K  hsmc
 ha8050s.pdf pdf_icon

HA8050

Spec. No. : HE6116HI-SINCERITYIssued Date : 1997.09.08Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5HA8050SNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8550S is designed for general purpose amplifier applications.TO-92Features High DC Current Gain (hFE=100~500 at IC=150mA) Complementary to HA8550SAbsolute Maximum Ratings Maximum Temperatu

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | DMG21401 | D42T1 | KRA741U

Keywords - HA8050 transistor datasheet

 HA8050 cross reference
 HA8050 equivalent finder
 HA8050 lookup
 HA8050 substitution
 HA8050 replacement

 

 
Back to Top

 


 
.