HBC856 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HBC856 Specs and Replacement

Type Designator: HBC856

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 65 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 115

Noise Figure, dB: -

Package: SOT-23

HBC856 Substitution

- BJT ⓘ Cross-Reference Search

HBC856 datasheet

..1. Size:38K hsmc

hbc856.pdf pdf_icon

Spec. No. HE6832 HI-SINCERITY Issued Date 1994.02.03 Revised Date 2004.09.01 MICROELECTRONICS CORP. Page No. 1/4 HBC856 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC856 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.... See More ⇒

Detailed specifications: HA3669, HA8050, HA8050S, HA8550, HA8550S, HBC517, HBC847, HBC848, 2N3906, HBD437T, HBD438T, HBF422, HBF423, HD122, HE8050, HE8050S, HE8550