HD122 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HD122 Specs and Replacement

Type Designator: HD122

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO-126ML

HD122 Substitution

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HD122 datasheet

..1. Size:61K hsmc

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Spec. No. HD200101 HI-SINCERITY Issued Date 1998.12.01 Revised Date 2006.07.19 MICROELECTRONICS CORP. Page No. 1/5 HD122 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Description The HD122 is designed for medium power linear and switching applications. TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ...................................... See More ⇒

0.1. Size:148K china

fhd122.pdf pdf_icon

FHD122(MJF122) NPN PCM Tc=25 30 W ICM 5 A Tjm 150 Tstg -55 150 V(BR) CBO ICB=20mA 100 V V(BR) CEO ICE=20mA 100 V V(BR)EBO ICE=20mA 5 V IEBO VEB=5V 2.0 V ICBO VCB=100V 0.01 mA ICEO VCE=50V 0.01 mA IC=3A VCEsat 2.0 V IB=12mA V... See More ⇒

Detailed specifications: HBC517, HBC847, HBC848, HBC856, HBD437T, HBD438T, HBF422, HBF423, 13003, HE8050, HE8050S, HE8550, HE8550S, HE9014, HE9015, HI10387, HI112