HD122 Datasheet, Equivalent, Cross Reference Search
Type Designator: HD122
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-126ML
HD122 Transistor Equivalent Substitute - Cross-Reference Search
HD122 Datasheet (PDF)
hd122.pdf
Spec. No. : HD200101HI-SINCERITYIssued Date : 1998.12.01Revised Date : 2006.07.19MICROELECTRONICS CORP.Page No. : 1/5HD122NPN EPITAXIAL SILICON DARLINGTON TRANSISTORDescriptionThe HD122 is designed for medium power linear and switching applications.TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ...................................
fhd122.pdf
FHD122(MJF122) NPN PCM Tc=25 30 W ICM 5 A Tjm 150 Tstg -55~150 V(BR) CBO ICB=20mA 100 V V(BR) CEO ICE=20mA 100 V V(BR)EBO ICE=20mA 5 V IEBO VEB=5V 2.0 V ICBO VCB=100V 0.01 mA ICEO VCE=50V 0.01 mA IC=3A VCEsat 2.0 V IB=12mA V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
