HI117 Specs and Replacement
Type Designator: HI117
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO-251
HI117 Substitution
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HI117 datasheet
Spec. No. HE9031 HI-SINCERITY Issued Date 1998.07.01 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/5 HI117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI117 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures Storage Temperatur... See More ⇒
Detailed specifications: HE8050, HE8050S, HE8550, HE8550S, HE9014, HE9015, HI10387, HI112, 2SC1815, HI122, HI127, HI13003, HI3669, HI649A, HI669A, HI772, HI882
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