HI117 Datasheet, Equivalent, Cross Reference Search
Type Designator: HI117
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-251
HI117 Transistor Equivalent Substitute - Cross-Reference Search
HI117 Datasheet (PDF)
..1. Size:51K hsmc
hi117.pdf
hi117.pdf
Spec. No. : HE9031HI-SINCERITYIssued Date : 1998.07.01Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/5HI117PNP EPITAXIAL PLANAR TRANSISTORDescriptionTO-251The HI117 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temperatur
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
