HI127 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HI127 Specs and Replacement

Type Designator: HI127

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO-251

HI127 Substitution

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HI127 datasheet

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Spec. No. HE9017 HI-SINCERITY Issued Date 1996.04.12 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/3 HI127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-251 High DC current gain Bult-in a damper diode at E-C Darlington Schematic C Absolute Maximum Ratings (TA=25 C) B Maximum Temperatures R1 R2 Storage Temperature .................................. See More ⇒

Detailed specifications: HE8550, HE8550S, HE9014, HE9015, HI10387, HI112, HI117, HI122, A940, HI13003, HI3669, HI649A, HI669A, HI772, HI882, HJ10387, HJ112