HI13003 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HI13003 Specs and Replacement

Type Designator: HI13003

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 21 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO-251

HI13003 Substitution

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HI13003 datasheet

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Spec. No. HE9034 HI-SINCERITY Issued Date 1999.03.17 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/4 HI13003 NPN EPITAXIAL PLANAR TRANSISTOR Description These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switchmode applications such as Switching Regul... See More ⇒

Detailed specifications: HE8550S, HE9014, HE9015, HI10387, HI112, HI117, HI122, HI127, B772, HI3669, HI649A, HI669A, HI772, HI882, HJ10387, HJ112, HJ117