All Transistors. HI13003 Datasheet

 

HI13003 Datasheet and Replacement


   Type Designator: HI13003
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 21 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO-251
 

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HI13003 Datasheet (PDF)

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HI13003

Spec. No. : HE9034HI-SINCERITYIssued Date : 1999.03.17Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/4HI13003NPN EPITAXIAL PLANAR TRANSISTORDescriptionThese devices are designed for high-voltage, high-speed power switchinginductive circuits where fall time is critical. They are particularly suited for 115 and220V switchmode applications such as Switching Regul

Datasheet: HE8550S , HE9014 , HE9015 , HI10387 , HI112 , HI117 , HI122 , HI127 , S8550 , HI3669 , HI649A , HI669A , HI772 , HI882 , HJ10387 , HJ112 , HJ117 .

History: 2SB1658 | 2N2394 | 2N678A | 2N3516 | VT6T1 | BRY62 | 2N334B

Keywords - HI13003 transistor datasheet

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