All Transistors. HI13003 Datasheet

 

HI13003 Datasheet and Replacement


   Type Designator: HI13003
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 21 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO-251
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HI13003 Datasheet (PDF)

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HI13003

Spec. No. : HE9034HI-SINCERITYIssued Date : 1999.03.17Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/4HI13003NPN EPITAXIAL PLANAR TRANSISTORDescriptionThese devices are designed for high-voltage, high-speed power switchinginductive circuits where fall time is critical. They are particularly suited for 115 and220V switchmode applications such as Switching Regul

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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