HI3669 Datasheet. Specs and Replacement

Type Designator: HI3669  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.25 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO-251

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HI3669 datasheet

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HI3669

Spec. No. HE9029 HI-SINCERITY Issued Date 1997.11.14 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/4 HI3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3669 is designed for using in power amplifier applications, power switching application. TO-251 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Tstg Storage Temperature........................... See More ⇒

Detailed specifications: HE9014, HE9015, HI10387, HI112, HI117, HI122, HI127, HI13003, 2SA1837, HI649A, HI669A, HI772, HI882, HJ10387, HJ112, HJ117, HJ122

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