All Transistors. HI3669 Datasheet

 

HI3669 Datasheet and Replacement


   Type Designator: HI3669
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: TO-251
 

 HI3669 Substitution

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HI3669 Datasheet (PDF)

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HI3669

Spec. No. : HE9029HI-SINCERITYIssued Date : 1997.11.14Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/4HI3669NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HI3669 is designed for using in power amplifier applications, power switchingapplication.TO-251Absolute Maximum Ratings (TA=25C) Maximum TemperaturesTstg Storage Temperature........................

Datasheet: HE9014 , HE9015 , HI10387 , HI112 , HI117 , HI122 , HI127 , HI13003 , BC546 , HI649A , HI669A , HI772 , HI882 , HJ10387 , HJ112 , HJ117 , HJ122 .

History: DDTC123EE | NSVBA114EDXV6T1G | 2SD1260 | NPS3901 | CH867UNPGP | INC5006AC1 | DT100-900

Keywords - HI3669 transistor datasheet

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