All Transistors. HI649A Datasheet

 

HI649A Datasheet and Replacement


   Type Designator: HI649A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO-251
 

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HI649A Datasheet (PDF)

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HI649A

Spec. No. : HE9003HI-SINCERITYIssued Date : 1998.01.25Revised Date : 2005.07.13MICROELECTRONICS CORP.Page No. : 1/4HI649APNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HI649A is designed for low frequency power amplifier.TO-251Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..................................................................

Datasheet: HE9015 , HI10387 , HI112 , HI117 , HI122 , HI127 , HI13003 , HI3669 , 8050 , HI669A , HI772 , HI882 , HJ10387 , HJ112 , HJ117 , HJ122 , HJ127 .

History: RT2N10M | 2SD1806 | 2SC5383 | KT361I | TI429 | CTP1545 | 2SD1834

Keywords - HI649A transistor datasheet

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