HI649A Datasheet. Specs and Replacement

Type Designator: HI649A  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 27 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO-251

 HI649A Substitution

- BJT ⓘ Cross-Reference Search

 

HI649A datasheet

 ..1. Size:43K  hsmc

 hi649a.pdf pdf_icon

HI649A

Spec. No. HE9003 HI-SINCERITY Issued Date 1998.01.25 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/4 HI649A PNP EPITAXIAL PLANAR TRANSISTOR Description The HI649A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ..................................................................... See More ⇒

Detailed specifications: HE9015, HI10387, HI112, HI117, HI122, HI127, HI13003, HI3669, BC546, HI669A, HI772, HI882, HJ10387, HJ112, HJ117, HJ122, HJ127

Keywords - HI649A pdf specs

 HI649A cross reference

 HI649A equivalent finder

 HI649A pdf lookup

 HI649A substitution

 HI649A replacement