HI882 Datasheet, Equivalent, Cross Reference Search
Type Designator: HI882
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-251
HI882 Transistor Equivalent Substitute - Cross-Reference Search
HI882 Datasheet (PDF)
..1. Size:55K hsmc
hi882.pdf
hi882.pdf
Spec. No. : HE9014 HI-SINCERITY Issued Date : 1996.04.12 Revised Date : 2006.12.06 MICROELECTRONICS CORP. Page No. : 1/5 HI882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI882 is designed for using in output stage of 10 W audio amplifier, voltage regulator, TO-251 DC-DC converter and relay driver. Absolute Maximum Ratings (T =25C) A Maximum Temperatures S
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
