All Transistors. HI882 Datasheet

 

HI882 Datasheet and Replacement


   Type Designator: HI882
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 45 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-251
 

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HI882 Datasheet (PDF)

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HI882

Spec. No. : HE9014 HI-SINCERITY Issued Date : 1996.04.12 Revised Date : 2006.12.06 MICROELECTRONICS CORP. Page No. : 1/5 HI882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI882 is designed for using in output stage of 10 W audio amplifier, voltage regulator, TO-251 DC-DC converter and relay driver. Absolute Maximum Ratings (T =25C) A Maximum Temperatures S

Datasheet: HI117 , HI122 , HI127 , HI13003 , HI3669 , HI649A , HI669A , HI772 , TIP31 , HJ10387 , HJ112 , HJ117 , HJ122 , HJ127 , HJ13003 , HJ3669 , HJ667A .

Keywords - HI882 transistor datasheet

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