HJ112 Datasheet. Specs and Replacement

Type Designator: HJ112  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO-252

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HJ112 datasheet

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HJ112

Spec. No. HE6030 HI-SINCERITY Issued Date 1998.07.01 Revised Date 2005.07.14 MICROELECTRONICS CORP. Page No. 1/5 HJ112 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ112 is designed for use in general purpose amplifier and low-speed switching applications. TO-252 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature .............................. See More ⇒

Detailed specifications: HI127, HI13003, HI3669, HI649A, HI669A, HI772, HI882, HJ10387, TIP31, HJ117, HJ122, HJ127, HJ13003, HJ3669, HJ667A, HJ669A, HJ772

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