HJ112 Datasheet, Equivalent, Cross Reference Search
Type Designator: HJ112
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-252
HJ112 Transistor Equivalent Substitute - Cross-Reference Search
HJ112 Datasheet (PDF)
..1. Size:58K hsmc
hj112.pdf
hj112.pdf
Spec. No. : HE6030HI-SINCERITYIssued Date : 1998.07.01Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/5HJ112NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HJ112 is designed for use in general purpose amplifier and low-speedswitching applications.TO-252Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ...........................
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
