All Transistors. HJ112 Datasheet

 

HJ112 Datasheet and Replacement


   Type Designator: HJ112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-252
 

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HJ112 Datasheet (PDF)

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HJ112

Spec. No. : HE6030HI-SINCERITYIssued Date : 1998.07.01Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/5HJ112NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HJ112 is designed for use in general purpose amplifier and low-speedswitching applications.TO-252Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ...........................

Datasheet: HI127 , HI13003 , HI3669 , HI649A , HI669A , HI772 , HI882 , HJ10387 , 2SD2499 , HJ117 , HJ122 , HJ127 , HJ13003 , HJ3669 , HJ667A , HJ669A , HJ772 .

History: OC603 | BDY22-10 | FJ0230-12 | KT361G3 | KN4A4Z | 2SA499R | MMUN2216L

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