All Transistors. HJ117 Datasheet

 

HJ117 Datasheet and Replacement


   Type Designator: HJ117
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-252
 

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HJ117 Datasheet (PDF)

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HJ117

Spec. No. : HE6031HI-SINCERITYIssued Date : 1998.02.01Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/4HJ117PNP EPITAXIAL PLANAR TRANSISTORDescription TO-252The HJ117 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temperature

Datasheet: HI13003 , HI3669 , HI649A , HI669A , HI772 , HI882 , HJ10387 , HJ112 , 2SC945 , HJ122 , HJ127 , HJ13003 , HJ3669 , HJ667A , HJ669A , HJ772 , HJ882 .

History: 2SD461 | DMG56405 | 2SC3603 | MPS6570A | KRC645T | UN1110Q | 2SD1808

Keywords - HJ117 transistor datasheet

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