HJ117 Datasheet, Equivalent, Cross Reference Search
Type Designator: HJ117
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO-252
HJ117 Transistor Equivalent Substitute - Cross-Reference Search
HJ117 Datasheet (PDF)
..1. Size:47K hsmc
hj117.pdf
hj117.pdf
Spec. No. : HE6031HI-SINCERITYIssued Date : 1998.02.01Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/4HJ117PNP EPITAXIAL PLANAR TRANSISTORDescription TO-252The HJ117 is designed for use in general purpose amplifier and low-speedswitching applications. Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temperature
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 50A02SS
