HJ122 Datasheet. Specs and Replacement

Type Designator: HJ122  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO-252

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HJ122 datasheet

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HJ122

Spec. No. HE6009 HI-SINCERITY Issued Date 1996.02.03 Revised Date 2005.07.14 MICROELECTRONICS CORP. Page No. 1/5 HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications. Darlington Schematic C Features B High DC current gain Built-in a damper diode at E-C R1 R2 E Absolute ... See More ⇒

Detailed specifications: HI3669, HI649A, HI669A, HI772, HI882, HJ10387, HJ112, HJ117, 2SD313, HJ127, HJ13003, HJ3669, HJ667A, HJ669A, HJ772, HJ882, HLB120A

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