All Transistors. HJ122 Datasheet

 

HJ122 Datasheet and Replacement


   Type Designator: HJ122
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-252
 

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HJ122 Datasheet (PDF)

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HJ122

Spec. No. : HE6009HI-SINCERITYIssued Date : 1996.02.03Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/5HJ122NPN EPITAXIAL PLANAR TRANSISTORDescription TO-252The HJ122 is designed for use in general purposes and low speed switchingapplications. Darlington SchematicCFeaturesB High DC current gain Built-in a damper diode at E-CR1 R2EAbsolute

Datasheet: HI3669 , HI649A , HI669A , HI772 , HI882 , HJ10387 , HJ112 , HJ117 , BC558 , HJ127 , HJ13003 , HJ3669 , HJ667A , HJ669A , HJ772 , HJ882 , HLB120A .

History: FA1A3Q | RT2N16M | BLY10 | 2SB634 | 2SD1355R | BFY48R | BC848BL

Keywords - HJ122 transistor datasheet

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