All Transistors. HJ122 Datasheet

 

HJ122 Datasheet and Replacement


   Type Designator: HJ122
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-252
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HJ122 Datasheet (PDF)

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HJ122

Spec. No. : HE6009HI-SINCERITYIssued Date : 1996.02.03Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/5HJ122NPN EPITAXIAL PLANAR TRANSISTORDescription TO-252The HJ122 is designed for use in general purposes and low speed switchingapplications. Darlington SchematicCFeaturesB High DC current gain Built-in a damper diode at E-CR1 R2EAbsolute

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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