HJ3669 Datasheet, Equivalent, Cross Reference Search
Type Designator: HJ3669
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO-252
HJ3669 Transistor Equivalent Substitute - Cross-Reference Search
HJ3669 Datasheet (PDF)
..1. Size:46K hsmc
hj3669.pdf
hj3669.pdf
Spec. No. : HE6029HI-SINCERITYIssued Date : 1997.10.24Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/4HJ3669NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HJ3669 is designed for using in power amplifier applications, power switchingapplication.TO-252Absolute Maximum Ratings (TA=25C) Maximum TemperaturesTstg Storage Temperature........................
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
