All Transistors. HJ3669 Datasheet

 

HJ3669 Datasheet and Replacement


   Type Designator: HJ3669
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: TO-252
 

 HJ3669 Substitution

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HJ3669 Datasheet (PDF)

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HJ3669

Spec. No. : HE6029HI-SINCERITYIssued Date : 1997.10.24Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/4HJ3669NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HJ3669 is designed for using in power amplifier applications, power switchingapplication.TO-252Absolute Maximum Ratings (TA=25C) Maximum TemperaturesTstg Storage Temperature........................

Datasheet: HI772 , HI882 , HJ10387 , HJ112 , HJ117 , HJ122 , HJ127 , HJ13003 , A1013 , HJ667A , HJ669A , HJ772 , HJ882 , HLB120A , HLB121A , HLB121D , HLB121I .

History: BUH515 | MMBR5031 | 3CA1012 | 2SC4523 | KRA225 | NPS3904 | BU931ZP

Keywords - HJ3669 transistor datasheet

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