All Transistors. HJ669A Datasheet

 

HJ669A Datasheet and Replacement


   Type Designator: HJ669A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 14 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO-252
 

 HJ669A Substitution

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HJ669A Datasheet (PDF)

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HJ669A

Spec. No. : HE6830HI-SINCERITYIssued Date : 1994.01.25Revised Date : 2004.09.23MICROELECTRONICS CORP.Page No. : 1/3HJ669ANPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HJ669A is designed for low frequency power amplifier.TO-252Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..................................................................

Datasheet: HJ10387 , HJ112 , HJ117 , HJ122 , HJ127 , HJ13003 , HJ3669 , HJ667A , C3198 , HJ772 , HJ882 , HLB120A , HLB121A , HLB121D , HLB121I , HLB122I , HLB123D .

History: DMC56106

Keywords - HJ669A transistor datasheet

 HJ669A cross reference
 HJ669A equivalent finder
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