HJ669A Datasheet. Specs and Replacement

Type Designator: HJ669A  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 14 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO-252

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HJ669A datasheet

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HJ669A

Spec. No. HE6830 HI-SINCERITY Issued Date 1994.01.25 Revised Date 2004.09.23 MICROELECTRONICS CORP. Page No. 1/3 HJ669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ669A is designed for low frequency power amplifier. TO-252 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ..................................................................... See More ⇒

Detailed specifications: HJ10387, HJ112, HJ117, HJ122, HJ127, HJ13003, HJ3669, HJ667A, 9014, HJ772, HJ882, HLB120A, HLB121A, HLB121D, HLB121I, HLB122I, HLB123D

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