All Transistors. HM112 Datasheet

 

HM112 Datasheet, Equivalent, Cross Reference Search


   Type Designator: HM112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: SOT-89

 HM112 Transistor Equivalent Substitute - Cross-Reference Search

   

HM112 Datasheet (PDF)

 ..1. Size:53K  hsmc
 hm112.pdf

HM112 HM112

Spec. No. : HM200102 HI-SINCERITY Issued Date : 2001.07.30 Revised Date : 2007.03.02 MICROELECTRONICS CORP. Page No. : 1/5 HM112 NPN EPITAXIAL PLANAR TRANSISTOR SOT-89 Description The HM112 is designed for use in general purpose amplifier and low-speed switching Darlington Schematic Capplications. Absolute Maximum Ratings (T =25C) A B Maximum Temperatures

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD2091

 

 
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