HM112 Datasheet. Specs and Replacement
Type Designator: HM112 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: SOT-89
HM112 Substitution
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HM112 datasheet
Spec. No. HM200102 HI-SINCERITY Issued Date 2001.07.30 Revised Date 2007.03.02 MICROELECTRONICS CORP. Page No. 1/5 HM112 NPN EPITAXIAL PLANAR TRANSISTOR SOT-89 Description The HM112 is designed for use in general purpose amplifier and low-speed switching Darlington Schematic C applications. Absolute Maximum Ratings (T =25 C) A B Maximum Temperatures ... See More ⇒
Detailed specifications: HLB121I, HLB122I, HLB123D, HLB123I, HLB123SA, HLB123T, HLB124E, HLB125HE, NJW0281G, HM117, HM2222A, HM2907A, HM3669, HM42, HM44, HM5401, HM5551
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