HM3669 Datasheet, Equivalent, Cross Reference Search
Type Designator: HM3669
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT-89
HM3669 Transistor Equivalent Substitute - Cross-Reference Search
HM3669 Datasheet (PDF)
..1. Size:52K hsmc
hm3669.pdf
hm3669.pdf
Spec. No. : HM200206HI-SINCERITYIssued Date : 2000.07.01Revised Date : 2004.11.24MICROELECTRONICS CORP.Page No. : 1/4HM3669NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HM3669 is designed for using in power amplifier applications, power switchingapplication.SOT-89Absolute Maximum Ratings (TA=25C) Maximum TemperaturesTstg Storage Temperature......................
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 45193
