HM3669 Datasheet. Specs and Replacement
Type Designator: HM3669 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: SOT-89
HM3669 Substitution
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HM3669 datasheet
Spec. No. HM200206 HI-SINCERITY Issued Date 2000.07.01 Revised Date 2004.11.24 MICROELECTRONICS CORP. Page No. 1/4 HM3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM3669 is designed for using in power amplifier applications, power switching application. SOT-89 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Tstg Storage Temperature......................... See More ⇒
Detailed specifications: HLB123SA, HLB123T, HLB124E, HLB125HE, HM112, HM117, HM2222A, HM2907A, BC549, HM42, HM44, HM5401, HM5551, HM669A, HM6718, HM772, HM772A
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