HM5551 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HM5551 Specs and Replacement

Type Designator: HM5551

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT-89

HM5551 Substitution

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HM5551 datasheet

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Spec. No. HE9507 HI-SINCERITY Issued Date 1996.04.09 Revised Date 2004.11.24 MICROELECTRONICS CORP. Page No. 1/4 HM5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM5551 is designed for general purpose applications requiring high breakdown voltages. SOT-89 Features High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) Complements to PNP type HM5401 Abs... See More ⇒

Detailed specifications: HM112, HM117, HM2222A, HM2907A, HM3669, HM42, HM44, HM5401, BC639, HM669A, HM6718, HM772, HM772A, HM882, HM92, HM94, HM965