All Transistors. HM5551 Datasheet

 

HM5551 Datasheet and Replacement


   Type Designator: HM5551
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-89
 

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HM5551 Datasheet (PDF)

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HM5551

Spec. No. : HE9507HI-SINCERITYIssued Date : 1996.04.09Revised Date : 2004.11.24MICROELECTRONICS CORP.Page No. : 1/4HM5551NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HM5551 is designed for general purpose applications requiring highbreakdown voltages.SOT-89Features High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) Complements to PNP type HM5401Abs

Datasheet: HM112 , HM117 , HM2222A , HM2907A , HM3669 , HM42 , HM44 , HM5401 , 2SA1015 , HM669A , HM6718 , HM772 , HM772A , HM882 , HM92 , HM94 , HM965 .

History: 2SC4367 | DTA123YKA | 2SD429 | BU921ZP | RT1N140C

Keywords - HM5551 transistor datasheet

 HM5551 cross reference
 HM5551 equivalent finder
 HM5551 lookup
 HM5551 substitution
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