HM669A Datasheet, Equivalent, Cross Reference Search
Type Designator: HM669A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-89
HM669A Transistor Equivalent Substitute - Cross-Reference Search
HM669A Datasheet (PDF)
..1. Size:40K hsmc
hm669a.pdf
hm669a.pdf
Spec. No. : HM200205HI-SINCERITYIssued Date : 1995.12.18Revised Date : 2004.09.16MICROELECTRONICS CORP.Page No. : 1/4HM669ANPN EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier complementary pair with HM649ASOT-89Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature .............................................................
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
