HM669A Datasheet. Specs and Replacement

Type Designator: HM669A  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-89

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HM669A datasheet

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HM669A

Spec. No. HM200205 HI-SINCERITY Issued Date 1995.12.18 Revised Date 2004.09.16 MICROELECTRONICS CORP. Page No. 1/4 HM669A NPN EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier complementary pair with HM649A SOT-89 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ................................................................ See More ⇒

Detailed specifications: HM117, HM2222A, HM2907A, HM3669, HM42, HM44, HM5401, HM5551, 2SD669, HM6718, HM772, HM772A, HM882, HM92, HM94, HM965, HMBT1015

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