HMBT1815 Datasheet. Specs and Replacement

Type Designator: HMBT1815  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT-23

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HMBT1815 datasheet

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HMBT1815

Spec. No. HE6805 HI-SINCERITY Issued Date 1992.08.25 Revised Date 2004.08.13 MICROELECTRONICS CORP. Page No. 1/4 HMBT1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.................................... See More ⇒

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HMBT1815

Spec. No. HE6804 HI-SINCERITY Issued Date 1992.08.25 Revised Date 2004.08.10 MICROELECTRONICS CORP. Page No. 1/4 HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.................................... See More ⇒

Detailed specifications: HM6718, HM772, HM772A, HM882, HM92, HM94, HM965, HMBT1015, TIP32C, HMBT2222A, HMBT2369, HMBT2907A, HMBT3904, HMBT3906, HMBT4401, HMBT4403, HMBT5401

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