HMBT6517 Datasheet, Equivalent, Cross Reference Search
Type Designator: HMBT6517
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT-23
HMBT6517 Transistor Equivalent Substitute - Cross-Reference Search
HMBT6517 Datasheet (PDF)
hmbt6517.pdf
Spec. No. : HE6836HI-SINCERITYIssued Date : 1994.07.20Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/4HMBT6517NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT6517 is designed for general purpose applications requiring highbreakdown voltages.FeaturesSOT-23 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage The H
hmbt6520.pdf
Spec. No. : HE6806HI-SINCERITYIssued Date : 1996.04.10Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/4HMBT6520PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT6520 is designed for general purpose applications requiring highbreakdown voltages.FeaturesSOT-23 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage The H
hmbt6427.pdf
Spec. No. : HE6846HI-SINCERITYIssued Date : 1995.07.21Revised Date : 2004.08.31MICROELECTRONICS CORP.Page No. : 1/4HMBT6427NPN EPITAXIAL PLANAR TRANSISTORDescriptionDarlington TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature................................................................................................................
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: D66EW2
