All Transistors. HSB649T Datasheet

 

HSB649T Datasheet and Replacement


   Type Designator: HSB649T
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-126
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HSB649T Datasheet (PDF)

 ..1. Size:41K  hsmc
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HSB649T

Spec. No. : HT200103HI-SINCERITYIssued Date : 2001.12.01Revised Date : 2005.12.02MICROELECTRONICS CORP.Page No. : 1/4HSB649TSILICON PNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-126Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..................................................................................

 8.1. Size:41K  hsmc
 hsb649a.pdf pdf_icon

HSB649T

Spec. No. : HE6629HI-SINCERITYIssued Date : 1995.12.18Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/4HSB649ASILICON PNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier complementary pair with HSD669A.TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..................................................

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: DMJT9435 | 2N249 | 2N5031 | 2SC3298A | 2SA982 | 2SA416 | BC859A

Keywords - HSB649T transistor datasheet

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