HSB772S Datasheet. Specs and Replacement

Type Designator: HSB772S  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-92

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HSB772S datasheet

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HSB772S

Spec. No. HE6549 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2004.08.13 MICROELECTRONICS CORP. Page No. 1/5 HSB772S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature..................... See More ⇒

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HSB772S

Spec. No. HE6605 HI-SINCERITY Issued Date 1993.05.15 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/5 HSB772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperat... See More ⇒

Detailed specifications: HPN2907A, HSA1015, HSA733, HSB1109, HSB1109S, HSB649A, HSB649T, HSB772, 2SC4793, HSB857, HSB857D, HSB857J, HSC1815, HSC945, HSD1609, HSD1609S, HSD1616A

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