All Transistors. HSB857J Datasheet

 

HSB857J Datasheet and Replacement


   Type Designator: HSB857J
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 170
   Noise Figure, dB: -
   Package: TO-252
 

 HSB857J Substitution

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HSB857J Datasheet (PDF)

 ..1. Size:43K  hsmc
 hsb857j.pdf pdf_icon

HSB857J

Spec. No. : HJ200101HI-SINCERITYIssued Date : 2001.09.01Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/4HSB857JPNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-252Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..........................................................................................

 8.1. Size:42K  hsmc
 hsb857d.pdf pdf_icon

HSB857J

Spec. No. : HE6705HI-SINCERITYIssued Date : 1995.01.27Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/4HSB857DPNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..........................................................................................

 8.2. Size:41K  hsmc
 hsb857.pdf pdf_icon

HSB857J

Spec. No. : HE6705HI-SINCERITYIssued Date : 1995.01.27Revised Date : 2005.10.07MICROELECTRONICS CORP.Page No. : 1/4HSB857 / 2SB857PNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ....................................................................................

 8.3. Size:44K  cn haohai electr
 hsb857 2sb857.pdf pdf_icon

HSB857J

Spec. No. : HE6705HI-SINCERITYIssued Date : 1995.01.27Revised Date : 2005.10.07MICROELECTRONICS CORP.Page No. : 1/4HSB857 / 2SB857PNP EPITAXIAL PLANAR TRANSISTORDescriptionLow frequency power amplifier.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ....................................................................................

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Datasheet: HSB1109 , HSB1109S , HSB649A , HSB649T , HSB772 , HSB772S , HSB857 , HSB857D , TIP35C , HSC1815 , HSC945 , HSD1609 , HSD1609S , HSD1616A , HSD313 , HSD468 , HSD667A .

Keywords - HSB857J transistor datasheet

 HSB857J cross reference
 HSB857J equivalent finder
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 HSB857J replacement

 

 
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