HSB857J PDF and Equivalents Search

 

HSB857J Specs and Replacement

Type Designator: HSB857J

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Forward Current Transfer Ratio (hFE), MIN: 170

Noise Figure, dB: -

Package: TO-252

 HSB857J Substitution

- BJT ⓘ Cross-Reference Search

 

HSB857J datasheet

 ..1. Size:43K  hsmc

hsb857j.pdf pdf_icon

HSB857J

Spec. No. HJ200101 HI-SINCERITY Issued Date 2001.09.01 Revised Date 2005.07.14 MICROELECTRONICS CORP. Page No. 1/4 HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ............................................................................................. See More ⇒

 8.1. Size:42K  hsmc

hsb857d.pdf pdf_icon

HSB857J

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/4 HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ............................................................................................. See More ⇒

 8.2. Size:41K  hsmc

hsb857.pdf pdf_icon

HSB857J

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.10.07 MICROELECTRONICS CORP. Page No. 1/4 HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ....................................................................................... See More ⇒

 8.3. Size:44K  cn haohai electr

hsb857 2sb857.pdf pdf_icon

HSB857J

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.10.07 MICROELECTRONICS CORP. Page No. 1/4 HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ....................................................................................... See More ⇒

Detailed specifications: HSB1109, HSB1109S, HSB649A, HSB649T, HSB772, HSB772S, HSB857, HSB857D, BD335, HSC1815, HSC945, HSD1609, HSD1609S, HSD1616A, HSD313, HSD468, HSD667A

Keywords - HSB857J pdf specs

 HSB857J cross reference

 HSB857J equivalent finder

 HSB857J pdf lookup

 HSB857J substitution

 HSB857J replacement

 

 

 


🌐 : EN  ES  РУ

social

LIST

Last Update

BJT: GA1A4M | SBT42 | 2SA200-Y

 

 

 

Popular searches

c1815 transistor | 2sc1815 | irfz44 | 2n5551 | irf540n | irf3205 mosfet | 2n3055 | irfp260n

 

 

↑ Back to Top
.