HSB857J Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSB857J  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 15 MHz

Ganancia de corriente contínua (hFE): 170

Encapsulados: TO-252

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HSB857J datasheet

 ..1. Size:43K  hsmc
 hsb857j.pdf pdf_icon

HSB857J

Spec. No. HJ200101 HI-SINCERITY Issued Date 2001.09.01 Revised Date 2005.07.14 MICROELECTRONICS CORP. Page No. 1/4 HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ..........................................................................................

 8.1. Size:42K  hsmc
 hsb857d.pdf pdf_icon

HSB857J

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/4 HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ..........................................................................................

 8.2. Size:41K  hsmc
 hsb857.pdf pdf_icon

HSB857J

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.10.07 MICROELECTRONICS CORP. Page No. 1/4 HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ....................................................................................

 8.3. Size:44K  cn haohai electr
 hsb857 2sb857.pdf pdf_icon

HSB857J

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.10.07 MICROELECTRONICS CORP. Page No. 1/4 HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ....................................................................................

MOSTRAR MÁS

Otros transistores... HSB1109, HSB1109S, HSB649A, HSB649T, HSB772, HSB772S, HSB857, HSB857D, BC546, HSC1815, HSC945, HSD1609, HSD1609S, HSD1616A, HSD313, HSD468, HSD667A