HSB857J Todos los transistores

 

HSB857J Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSB857J
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 15 MHz
   Ganancia de corriente contínua (hfe): 170
   Paquete / Cubierta: TO-252
 

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HSB857J datasheet

 ..1. Size:43K  hsmc
 hsb857j.pdf pdf_icon

HSB857J

Spec. No. HJ200101 HI-SINCERITY Issued Date 2001.09.01 Revised Date 2005.07.14 MICROELECTRONICS CORP. Page No. 1/4 HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-252 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ..........................................................................................

 8.1. Size:42K  hsmc
 hsb857d.pdf pdf_icon

HSB857J

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/4 HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ..........................................................................................

 8.2. Size:41K  hsmc
 hsb857.pdf pdf_icon

HSB857J

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.10.07 MICROELECTRONICS CORP. Page No. 1/4 HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ....................................................................................

 8.3. Size:44K  cn haohai electr
 hsb857 2sb857.pdf pdf_icon

HSB857J

Spec. No. HE6705 HI-SINCERITY Issued Date 1995.01.27 Revised Date 2005.10.07 MICROELECTRONICS CORP. Page No. 1/4 HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ....................................................................................

MOSTRAR MÁS

Otros transistores... HSB1109 , HSB1109S , HSB649A , HSB649T , HSB772 , HSB772S , HSB857 , HSB857D , BD335 , HSC1815 , HSC945 , HSD1609 , HSD1609S , HSD1616A , HSD313 , HSD468 , HSD667A .

 

 

 


 
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