HSC945 Specs and Replacement
Type Designator: HSC945
SMD Transistor Code: CR
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 135
HSC945 Substitution
- BJT ⓘ Cross-Reference Search
HSC945 datasheet
Spec. No. HE6517 HI-SINCERITY Issued Date 1995.02.11 Revised Date 2004.08.09 MICROELECTRONICS CORP. Page No. 1/5 HSC945 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC945 is designed for using driver stage of AP amplifier and low speed switching applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................... See More ⇒
HSC945 NPN-TRANSISTOR NPN, 100mA, 60V NPN HSC945 NPN EPITAXIAL PLANAR TRANSISTOR SMD HSC945LT1 NPN, BEC Excellent hFE linearity General Purpose Transistors Low noise Complementary to A733 Transistor Polarity NPN C945 Transistor pinout BEC 2SC945 C945L... See More ⇒
Detailed specifications: HSB649A, HSB649T, HSB772, HSB772S, HSB857, HSB857D, HSB857J, HSC1815, B772, HSD1609, HSD1609S, HSD1616A, HSD313, HSD468, HSD667A, HSD669A, HSD669AT
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